A 920-MHz, 160-μW, 25-dB Gain Negative Resistance Reflection Amplifier for BPSK Modulation RFID Tag

This paper describes a negative resistance reflection amplifier for BPSK modulation RFID tag. The amplifier has a cascode configuration with a source degeneration capacitor and resistor. The capacitor with 1-bit binary capacitance controlled by a FET switch can realize two different impedances with...

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Bibliographic Details
Published in:IEEE journal of radio frequency identification (Online) 2024, Vol.8, p.811-820
Main Authors: Tsuji, Takahiro, Miyazaki, Yoshiki, Maeda, Tadashi
Format: Article
Language:English
Subjects:
920MHz
Amplifiers
Backscatter
Binary phase shift keying
BPSK modulation
Capacitance
Capacitors
circuit analysis
Degeneration
HEMT
Impedance
Logic gates
Modulation
Negative resistance
Phase shift
Power demand
Radio frequency identification
Reflectance
reflection amplifier
Reflection coefficient
Resistance
RFID tag
smith chart
Switches
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Description
Summary:This paper describes a negative resistance reflection amplifier for BPSK modulation RFID tag. The amplifier has a cascode configuration with a source degeneration capacitor and resistor. The capacitor with 1-bit binary capacitance controlled by a FET switch can realize two different impedances with negative resistance in which those impedance phase difference is close to 180 degrees. The fabricated amplifier using HEMT devices achieves 25 dB gain with the phase difference of 180~\pm ~10 degrees between reflection coefficient point \boldsymbol {\varGamma }_{0} and \varGamma _{1} for BPSK modulation with a power consumption of 160~\mu W. Friis transmission equation suggests that the tag incorporating our amplifier could extend the up-link communication range up to 40m.
ISSN:2469-7281
2469-729X
DOI:10.1109/JRFID.2024.3481423