Mechanism of Hydrogen Sensing by AlGaN/GaN Pt-Gate Field Effect Transistors: Magnetoresistance Studies

Physical mechanism responsible for hydrogen sensing by AlGaN/GaN transistors was investigated. Original resistance studies versus magnetic fields (up to 8 T) were used to determine precisely hydrogen-induced change of carrier mobility and density. Results clearly show that the carrier mobility chang...

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Published in:IEEE sensors journal 2015-01, Vol.15 (1), p.123-127
Main Authors: Consejo, Christophe, Prystawko, Paweł, Knap, Wojciech, Nowakowska-Siwinska, Anna, Perlin, Piotr, Leszczynski, Michał
Format: Article
Language:English
Subjects:
Charge carrier density
Condensed Matter
Conductivity
Gallium nitride
HEMTs
Hydrogen
Logic gates
Materials Science
Physics
Sensors
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container_title IEEE sensors journal
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creator Consejo, Christophe
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description Physical mechanism responsible for hydrogen sensing by AlGaN/GaN transistors was investigated. Original resistance studies versus magnetic fields (up to 8 T) were used to determine precisely hydrogen-induced change of carrier mobility and density. Results clearly show that the carrier mobility change is responsible for
doi_str_mv 10.1109/JSEN.2014.2340436
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source IEEE Electronic Library (IEL) Journals
subjects Charge carrier density
Condensed Matter
Conductivity
Gallium nitride
HEMTs
Hydrogen
Logic gates
Materials Science
Physics
Sensors
title Mechanism of Hydrogen Sensing by AlGaN/GaN Pt-Gate Field Effect Transistors: Magnetoresistance Studies
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