Enhancement in CMOS-MEMS Resonator for High Sensitive Temperature Sensing

This paper presents the enhancement in frequency shift per Celsius for high-temperature sensitive applications of microresonators. Using materials with different coefficients of thermal expansion in a substrate and beam, larger axial load on fixed ends are demonstrated. This results in a larger freq...

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Bibliographic Details
Published in:IEEE sensors journal 2017-02, Vol.17 (3), p.598-603
Main Authors: Goktas, Hasan, Turner, Kimberly L., Zaghloul, Mona E.
Format: Article
Language:English
Subjects:
Aluminum
Ambient temperature
Axial loads
CMOS
CMOS-MEMS
electrostatic devices
Frequency measurement
Frequency shift
Heating
High temperature
microelectromechanical devices
Microelectromechanical systems
microresonators
Polysilicon
Resonant frequency
Resonators
Sensitivity
Stiffness
Substrates
Temperature measurement
Temperature sensors
Thermal expansion
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Summary:This paper presents the enhancement in frequency shift per Celsius for high-temperature sensitive applications of microresonators. Using materials with different coefficients of thermal expansion in a substrate and beam, larger axial load on fixed ends are demonstrated. This results in a larger frequency shift with the increase in the ambient temperature. An analytical model is presented that closely matches simulation and measurement results. The 120-μm CMOS-MEMS fixed-fixed beam resonators, consisting of multiple metal, dielectric layers, and polysilicon layer, were designed and measured with a center frequency around 640 kHz. A sensitivity up to -2983 Hz/°C is achieved without sacrificing stiffness constant.
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2016.2633619