A Bluetooth radio in 0.18-/spl mu/m CMOS

This paper describes the results of an implementation of a Bluetooth radio in a 0.18-/spl mu/m CMOS process. A low-IF image-reject conversion architecture is used for the receiver. The transmitter uses direct IQ-upconversion. The VCO runs at 4.8-5.0 GHz, thus facilitating the generation of 0/spl deg...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2002-12, Vol.37 (12), p.1679-1687
Main Authors: van Zeijl, P., Eikenbroek, J.-W.T., Vervoort, P.-P., Setty, S., Tangenherg, J., Shipton, G., Kooistra, E., Keekstra, I.C., Belot, D., Visser, K., Bosma, E., Blaakmeer, S.C.
Format: Article
Language:English
Subjects:
Bluetooth
CMOS process
Crosstalk
Image converters
Radio transmitters
Receivers
Signal generators
Silicon
Transceivers
Voltage-controlled oscillators
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Summary:This paper describes the results of an implementation of a Bluetooth radio in a 0.18-/spl mu/m CMOS process. A low-IF image-reject conversion architecture is used for the receiver. The transmitter uses direct IQ-upconversion. The VCO runs at 4.8-5.0 GHz, thus facilitating the generation of 0/spl deg/ and 90/spl deg/ signals for both the receiver and transmitter. By using an inductor-less LNA and the extensive use of mismatch simulations, the smallest silicon area for a Bluetooth radio implementation so far can be reached: 5.5 mm/sup 2/. The transceiver consumes 30 mA in receive mode and 35 mA in transmit mode from a 2.5 to 3.0-V power supply. As the radio operates on the same die as baseband and SW, the crosstalk-on-silicon is an important issue. This crosstalk problem was taken into consideration from the start of the project. Sensitivity was measured at -82 dBm.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2002.804350