Development of Embedded Three-Dimensional 35-nF/mm ^ MIM Capacitor and BiCMOS Circuits Characterization

This paper summarizes the electrical characterization of MIM capacitor realized in three dimensions. Manufacturing of the device is described, as well as an electrical comparison of three dielectrics, Si 3 N 4 , Al 2 O 3 , Ta 2 O 5 and two deposition methods, metal organic chemical vapor deposition...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2007-09, Vol.42 (9), p.1842-1850
Main Authors: Giraudin, J.-G., Badets, F., Blanc, J.-P., Chataigner, E., Chappaz, C., Regolini, J.L., Delpech, P.
Format: Article
Language:English
Subjects:
Atomic layer deposition
BiCMOS integrated circuits
capacitors
Chemical vapor deposition
Dielectric devices
filters
frequency synthesizers
Leakage current
Manufacturing
MIM capacitors
MIM devices
MOCVD
Organic chemicals
Phase locked loops
Voltage-controlled oscillators
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Summary:This paper summarizes the electrical characterization of MIM capacitor realized in three dimensions. Manufacturing of the device is described, as well as an electrical comparison of three dielectrics, Si 3 N 4 , Al 2 O 3 , Ta 2 O 5 and two deposition methods, metal organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). Selecting Al 2 O 3 deposited by ALD, high density of 35 nF/mm 2 is obtained with low leakage current. Statistical measurements put forward the industrial robustness of the device integrated in BiCMOS technology. Three circuits embedding this new device are characterized: a high-pass filter, a voltage-controlled oscillator (VCO), and a phase-locked loop (PLL). They demonstrate excellent performances with significant area and assembly costs savings.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2007.900787