A Fully-Integrated Quad-Band GSM/GPRS CMOS Power Amplifier

Concentric distributed active transformers (DAT) are used to implement a fully-integrated quad-band power amplifier (PA) in a standard 130 nm CMOS process. The DAT enables the power amplifier to integrate the input and output matching networks on the same silicon die. The PA integrates on-chip close...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2008-12, Vol.43 (12), p.2747-2758
Main Authors: Aoki, I., Kee, S., Magoon, R., Aparicio, R., Bohn, F., Zachan, J., Hatcher, G., McClymont, D., Hajimiri, A.
Format: Article
Language:English
Subjects:
Amplifiers
Applied sciences
Circuit properties
CMOS process
CMOS RF
CMOSFET power amplifiers
Design. Technologies. Operation analysis. Testing
distributed active transformer (DAT)
Distributed amplifiers
Electric, optical and optoelectronic circuits
Electronic circuits
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
global system for mobile communications (GSM)
Ground penetrating radar
GSM
Impedance matching
Integrated circuits
Packaging
Power amplifiers
Power control
reliability
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Transformers
Transistors
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Description
Summary:Concentric distributed active transformers (DAT) are used to implement a fully-integrated quad-band power amplifier (PA) in a standard 130 nm CMOS process. The DAT enables the power amplifier to integrate the input and output matching networks on the same silicon die. The PA integrates on-chip closed- loop power control and operates under supply voltages from 2.9 V to 5.5 V in a standard micro-lead-frame package. It shows no oscillations, degradation, or failures for over 2000 hours of operation with a supply of 6 V at 135degC under a VSWR of 15:1 at all phase angles and has also been tested for more than 2 million device-hours (with ongoing reliability monitoring) without a single failure under nominal operation conditions. It produces up to +35 dBm of RF power with power-added efficiency of 51%.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2008.2004870