A 288-GHz Lens-Integrated Balanced Triple-Push Source in a 65-nm CMOS Technology

• Published in: IEEE journal of solid-state circuits 2013-07, Vol.48 (7), p.1751-1761
• Main Authors: Grzyb, Janusz, Yan Zhao, Pfeiffer, U. R.
• Format: Article
• Language: English
• Subjects: Applied sciences; Circuit properties; CMOS; Couplings; Design. Technologies. Operation analysis. Testing; Electric, optical and optoelectronic circuits; Electronic circuits; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Exact sciences and technology; Harmonic analysis; Imaging devices; Integrated circuits; Layout; Logic gates; Magnetic cores; N-push harmonic osscillator; Oscillators; Oscillators, resonators, synthetizers; Power generation; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; silicon lens; sub-millimeter wave imaging; sub-millimeter wave source; terahertz (THz); terahertz imaging
• ISSN: 0018-9200; 1558-173X
• DOI: 10.1109/JSSC.2013.2253403

A 288-GHz lens-integrated high-power source implemented in a 65-nm CMOS technology is presented. The source consists of two free-running triple-push ring oscillators locked out-of phase by magnetic coupling. The oscillators drive a differential on-chip ring antenna, which illuminates a hyper-hemispherical silicon lens through the backside of the die. An on-wafer breakout of the oscillators core achieves a peak output power of -1.5 dBm with a 275-mW DC power consumption. The radiated power of the packaged source is -4.1 dBm, which is the highest reported radiated power of a single CMOS source beyond 200 GHz. The source die including the antenna occupies only 500 x 570 μ m 2 .