A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate

Most memory-chip manufacturers keep trying to supply cost-effective storage devices with high-performance characteristics such as shorter tPROG, lower power consumption and higher endurance. For many years, every effort has been made to shrink die size to lower cost and to improve performance. Howev...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2016-01, Vol.51 (1), p.204-212
Main Authors: Jeong, Woopyo, Im, Jae-woo, Kim, Doo-Hyun, Nam, Sang-Wan, Shim, Dong-Kyo, Choi, Myung-Hoon, Yoon, Hyun-Jun, Kim, Dae-Han, Kim, You-Se, Park, Hyun-Wook, Kwak, Dong-Hun, Park, Sang-Won, Yoon, Seok-Min, Hahn, Wook-Ghee, Ryu, Jin-Ho, Shim, Sang-Won, Kang, Kyung-Tae, Ihm, Jeong-Don, Kim, In-Mo, Lee, Doo-Sub, Cho, Ji-Ho, Kim, Moo-Sung, Jang, Jae-Hoon, Hwang, Sang-Won, Byeon, Dae-Seok, Yang, Hyang-Ja, Park, Kitae, Kyung, Kye-Hyun, Choi, Jeong-Hyuk
Format: Article
Language:English
Subjects:
1 Gb/s data rate
3D vertical-NAND flash
Circuits
Computer architecture
Current measurement
dynamic bandwidth control scheme
Electrical resistance measurement
Endurance
Flash memories
Flash memory (computers)
good endurance
high performance
high speed program
low energy
Microprocessors
Patterning
Power consumption
Programming
read latency
Resistance
resistance monitor
simple state selection
Stacking
Stacks
Three dimensional
WL overdrive
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Summary:Most memory-chip manufacturers keep trying to supply cost-effective storage devices with high-performance characteristics such as shorter tPROG, lower power consumption and higher endurance. For many years, every effort has been made to shrink die size to lower cost and to improve performance. However, the previously used node-shrinking methodology is facing challenges due to increased cell-to-cell interference and patterning difficulties caused by decreasing dimension. To overcome these limitations, 3D-stacking technology has been developed. As a result of long and focused research in 3D stacking technology, we succeed in developing 128 Gb 3b/cell Vertical NAND with 32 stack WL layers for the first time, which is the smallest 128 Gb NAND Flash. The die size is 68.9 mm 2 , program time is 700 us and I/O rate is 1 Gb/s.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2015.2474117