RF-to-Millimeter-Wave Receivers Employing Frequency-Translated Feedback

This article presents multi-band direct-conversion receivers (RXs) with frequency-translated negative feedback. The forward path includes a low-noise transconductance amplifier (LNTA) followed by four-phase passive mixers that drive baseband amplifiers. A feedback path employs tunable resistor banks...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2024-05, Vol.59 (5), p.1447-1460
Main Authors: Dean, Jacob, Hari, Sandeep, Floyd, Brian A.
Format: Article
Language:English
Subjects:
Amplifiers
Baseband
beamforming
Circuits
CMOS
direct conversion
frequency-translational feedback
front end
Harmonic analysis
Impedance
Impedance matching
millimeter wave (mm-wave)
Millimeter waves
mixer
Mixers
N-path
Negative feedback
Noise levels
passive mixer
Quadratures
Radio frequency
receiver (RX)
software-defined radio
Third order intercept point
Transconductance
Waveforms
wideband
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Description
Summary:This article presents multi-band direct-conversion receivers (RXs) with frequency-translated negative feedback. The forward path includes a low-noise transconductance amplifier (LNTA) followed by four-phase passive mixers that drive baseband amplifiers. A feedback path employs tunable resistor banks attached to additional four-phase passive mixers, allowing tunable, frequency-selective input matching around a wide range of local oscillator (LO) frequencies. The passive mixers are driven by 25% duty-cycle, non-overlapping quadrature LO waveforms, and two different methods are presented for generating such waveforms. Two RX variants, differing in their LO generation schemes, are fabricated in 45-nm SOI CMOS. The first operates from 6 to 30 GHz, exhibiting greater than 25-dB gain and 4.1-10.5-dB noise figure (NF). A second operates from 10 to 50 GHz, achieving greater than 18-dB gain with 7.1-17-dB NF across the band. For either version, the instantaneous bandwidth is 960 MHz for the highest gain setting and 1375 MHz with reduced gain, measured at 10 GHz LO. The in- band third-order intercept point (IIP3) is −5.4 dBm, the in- band IIP2 is +16.5 dBm, and the out-of-band 1-dB blocker compression is greater than −15 dBm. The RX core consumes 71 mW, while LO circuitry in each variant consumes 48-182 and 72-262 mW from 10 to 50 and 6 to 30 GHz, respectively.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2023.3322136