A 3-nm FinFET 27.6-Mbit/mm 2 Single-Port 6T SRAM Enabling 0.48–1.2 V Wide Operating Range With Far-End Pre-Charge and Weak-Bit Tracking

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2024-04, Vol.59 (4), p.1225-1234
Main Authors: Aoyagi, Yumito, Nii, Koji, Yabuuchi, Makoto, Tanaka, Tomotaka, Ishii, Yuichiro, Osada, Yoshiaki, Nakazato, Takaaki, Wang, Isabel, Hsu, Yu-Hao, Cheng, Hong-Chen, Liao, Hung-Jen, Chang, Tsung-Yung Jonathan
Format: Article
Language:English
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ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2024.3355447