Silicon substrates with buried distributed Bragg reflectors for resonant cavity-enhanced optoelectronics

We report on a commercially reproducible silicon wafer with a high-reflectance buried distributed Bragg reflector (DBR). The substrate consists of a two-period DBR fabricated using a double silicon-on-insulator (SOI) process. The buried DBR provides a 90% reflecting surface. We have fabricated reson...

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Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 2002-07, Vol.8 (4), p.948-955
Main Authors: Emsley, M.K., Dosunmu, O., Unlu, M.S.
Format: Article
Language:English
Subjects:
Absorption
Bragg reflectors
Covering
Distributed Bragg reflectors
Government
Optical refraction
Optical resonators
Optoelectronics
Photodetectors
Quantum efficiency
Quantum electronics
Reflectivity
Resonance
Silicon
Silicon on insulator technology
Silicon substrates
Substrates
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Summary:We report on a commercially reproducible silicon wafer with a high-reflectance buried distributed Bragg reflector (DBR). The substrate consists of a two-period DBR fabricated using a double silicon-on-insulator (SOI) process. The buried DBR provides a 90% reflecting surface. We have fabricated resonant cavity-enhanced Si photodetectors with 40% quantum efficiency at 860 nm and a full-width at half-maximum of 29 ps suitable for 10 Gbps data communications. We have also implemented double-SOI substrates with 90% reflectivity covering 1300 and 1550 nm for use in Si-based optoelectronics.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2002.801692