Ferroelectric Relaxation Oscillators and Spiking Neurons

We report the experimental demonstration of the ferroelectric field-effect transistor (FEFET)-based relaxation oscillators and spiking neurons. The ferroelectric relaxation oscillators and the ferroelectric spiking neurons, harnessing the abrupt hysteretic transition feature of ferroelectrics, have...

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Bibliographic Details
Published in:IEEE journal on exploratory solid-state computational devices and circuits 2019-12, Vol.5 (2), p.151-157
Main Authors: Wang, Zheng, Khan, Asif I.
Format: Article
Language:English
Subjects:
FeFETs
Ferroelectric field-effect transistor (FEFET)
Ferroelectric materials
Ferroelectricity
ferroelectrics
Field effect transistors
MOSFET
Neural networks
neuromorphic
Neuromorphic engineering
Neurons
Oscillators
relaxation oscillator
Relaxation oscillators
Semiconductor devices
Spiking
spiking neuron
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Summary:We report the experimental demonstration of the ferroelectric field-effect transistor (FEFET)-based relaxation oscillators and spiking neurons. The ferroelectric relaxation oscillators and the ferroelectric spiking neurons, harnessing the abrupt hysteretic transition feature of ferroelectrics, have a compact 1T-1FEFET structure. The bias conditions of the FEFET can dynamically tune the hysteresis; therefore, the dynamics of oscillations and spikings can be controlled, which enable both excitation and inhibition functions in ferroelectric spiking neurons. Such FEFET-based systems are basic building blocks for efficient computational platforms for non-von Neumann and neuromorphic computing paradigms, such as coupled oscillator networks and spiking neural networks.
ISSN:2329-9231
2329-9231
DOI:10.1109/JXCDC.2019.2928769