Effects of Sc 2 O 3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs

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Bibliographic Details
Published in:IEEE electron device letters 2002-09, Vol.23 (9), p.505-507
Main Authors: Gillespie, J.K., Fitch, R.C., Sewell, J., Dettmer, R., Via, G.D., Crespo, A., Jenkins, T.J., Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J.
Format: Article
Language:English
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2002.802592