Effect of the composition on the electrical properties of TaSi/sub x/N y metal gate electrodes

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2003-07, Vol.24 (7), p.439-441
Main Authors: You-Seok Suh, Heuss, G.P., Jae-Hoon Lee, Misra, V.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c869-afad8d32400f87cf7f4a83678610fb8381ce5518d1b88cce5d3d7a497b05cbd43
cites cdi_FETCH-LOGICAL-c869-afad8d32400f87cf7f4a83678610fb8381ce5518d1b88cce5d3d7a497b05cbd43
container_end_page 441
container_issue 7
container_start_page 439
container_title IEEE electron device letters
container_volume 24
creator You-Seok Suh
Heuss, G.P.
Jae-Hoon Lee
Misra, V.
description
doi_str_mv 10.1109/LED.2003.814009
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1109_LED_2003_814009</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1109_LED_2003_814009</sourcerecordid><originalsourceid>FETCH-LOGICAL-c869-afad8d32400f87cf7f4a83678610fb8381ce5518d1b88cce5d3d7a497b05cbd43</originalsourceid><addsrcrecordid>eNo1kE9LxDAQxYMoWFfPXvMFup3ZpE16lLW6QtGDPVvS_NFKa0pSwf32tqzCwBtm3jyGHyG3CFtEKLO6ut_uANhWIgcoz0iCeS5TyAt2ThIQHFOGUFySqxg_AZBzwRPyVjln9Uy9o_OHpdqPk4_93PsvutQ6ssOyD71WA52Cn2yYextXf6Ne-yx-d_Qne6ZHOtp5sbyr-f_EGxuvyYVTQ7Q3f7ohzUPV7A9p_fL4tL-rUy2LMlVOGWnYbvnbSaGdcFxJVghZILhOMona5jlKg52UeukNM0LxUnSQ685wtiHZKVYHH2Owrp1CP6pwbBHalU670GlXOu2JDvsFE_NYXw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effect of the composition on the electrical properties of TaSi/sub x/N y metal gate electrodes</title><source>IEEE Electronic Library (IEL) Journals</source><creator>You-Seok Suh ; Heuss, G.P. ; Jae-Hoon Lee ; Misra, V.</creator><creatorcontrib>You-Seok Suh ; Heuss, G.P. ; Jae-Hoon Lee ; Misra, V.</creatorcontrib><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2003.814009</identifier><language>eng</language><ispartof>IEEE electron device letters, 2003-07, Vol.24 (7), p.439-441</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c869-afad8d32400f87cf7f4a83678610fb8381ce5518d1b88cce5d3d7a497b05cbd43</citedby><cites>FETCH-LOGICAL-c869-afad8d32400f87cf7f4a83678610fb8381ce5518d1b88cce5d3d7a497b05cbd43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>You-Seok Suh</creatorcontrib><creatorcontrib>Heuss, G.P.</creatorcontrib><creatorcontrib>Jae-Hoon Lee</creatorcontrib><creatorcontrib>Misra, V.</creatorcontrib><title>Effect of the composition on the electrical properties of TaSi/sub x/N y metal gate electrodes</title><title>IEEE electron device letters</title><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNo1kE9LxDAQxYMoWFfPXvMFup3ZpE16lLW6QtGDPVvS_NFKa0pSwf32tqzCwBtm3jyGHyG3CFtEKLO6ut_uANhWIgcoz0iCeS5TyAt2ThIQHFOGUFySqxg_AZBzwRPyVjln9Uy9o_OHpdqPk4_93PsvutQ6ssOyD71WA52Cn2yYextXf6Ne-yx-d_Qne6ZHOtp5sbyr-f_EGxuvyYVTQ7Q3f7ohzUPV7A9p_fL4tL-rUy2LMlVOGWnYbvnbSaGdcFxJVghZILhOMona5jlKg52UeukNM0LxUnSQ685wtiHZKVYHH2Owrp1CP6pwbBHalU670GlXOu2JDvsFE_NYXw</recordid><startdate>200307</startdate><enddate>200307</enddate><creator>You-Seok Suh</creator><creator>Heuss, G.P.</creator><creator>Jae-Hoon Lee</creator><creator>Misra, V.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200307</creationdate><title>Effect of the composition on the electrical properties of TaSi/sub x/N y metal gate electrodes</title><author>You-Seok Suh ; Heuss, G.P. ; Jae-Hoon Lee ; Misra, V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c869-afad8d32400f87cf7f4a83678610fb8381ce5518d1b88cce5d3d7a497b05cbd43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>You-Seok Suh</creatorcontrib><creatorcontrib>Heuss, G.P.</creatorcontrib><creatorcontrib>Jae-Hoon Lee</creatorcontrib><creatorcontrib>Misra, V.</creatorcontrib><collection>CrossRef</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>You-Seok Suh</au><au>Heuss, G.P.</au><au>Jae-Hoon Lee</au><au>Misra, V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of the composition on the electrical properties of TaSi/sub x/N y metal gate electrodes</atitle><jtitle>IEEE electron device letters</jtitle><date>2003-07</date><risdate>2003</risdate><volume>24</volume><issue>7</issue><spage>439</spage><epage>441</epage><pages>439-441</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><doi>10.1109/LED.2003.814009</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0741-3106
ispartof IEEE electron device letters, 2003-07, Vol.24 (7), p.439-441
issn 0741-3106
1558-0563
language eng
recordid cdi_crossref_primary_10_1109_LED_2003_814009
source IEEE Electronic Library (IEL) Journals
title Effect of the composition on the electrical properties of TaSi/sub x/N y metal gate electrodes
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-23T20%3A16%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20the%20composition%20on%20the%20electrical%20properties%20of%20TaSi/sub%20x/N%20y%20metal%20gate%20electrodes&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=You-Seok%20Suh&rft.date=2003-07&rft.volume=24&rft.issue=7&rft.spage=439&rft.epage=441&rft.pages=439-441&rft.issn=0741-3106&rft.eissn=1558-0563&rft_id=info:doi/10.1109/LED.2003.814009&rft_dat=%3Ccrossref%3E10_1109_LED_2003_814009%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c869-afad8d32400f87cf7f4a83678610fb8381ce5518d1b88cce5d3d7a497b05cbd43%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true