High-performance p-type independent-gate FinFETs

We present, to our knowledge, the first successful integration of two independent gates on a p-type FinFET. These results also represent a significant performance improvement over previously reported Independent-Gate FinFET results. The devices have gate lengths ranging from 0.5 to 5 μm, and designe...

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Bibliographic Details
Published in:IEEE electron device letters 2004-04, Vol.25 (4), p.199-201
Main Authors: Fried, D.M., Duster, J.S., Kornegay, K.T.
Format: Article
Language:English
Subjects:
CMOS process
CMOS technology
Devices
Drains
Electric potential
Etching
Fabrication
FinFETs
Gates
Lithography
MOSFET circuits
Performance enhancement
Rapid thermal annealing
Semiconductor films
Silicon on insulator technology
Slopes
Trends
Voltage
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Summary:We present, to our knowledge, the first successful integration of two independent gates on a p-type FinFET. These results also represent a significant performance improvement over previously reported Independent-Gate FinFET results. The devices have gate lengths ranging from 0.5 to 5 μm, and designed fin thicknesses ranging from 25 to 75 nm. Electrical results show near-ideal subthreshold slopes in double-gate mode (both gates modulated simultaneously). Independent-Gate operation is also examined by modulating saturated drain current with both front and back-gate voltages independently. The results are compiled to analyze performance trends versus fin thickness and gate length.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2004.825160