High SCR design for one-transistor split-gate full-featured EEPROM

A high source-coupling ratio design for full-featured EEPROM composed of one-transistor split-gate cells with a cell area of less than 22 F/sup 2/ is proposed. This is in contrast to a traditional cell that requires an extra select transistor and is not area economic when compared to the new design...

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Bibliographic Details
Published in:IEEE electron device letters 2004-07, Vol.25 (7), p.498-500
Main Authors: Wen-Ting Chu, Hao-Hsiung Lin, Yu-Hsiung Wang, Chia-Ta Hsieh, Hung-Cheng Sung, Yung-Tao Lin, Wang, C.S.
Format: Article
Language:English
Subjects:
Circuit testing
Cycles
Devices
Economics
EEPROM
Electric potential
Electrons
EPROM
Flash memory
Gain
Immunity
Silicon compounds
Split gate flash memory cells
Stress
Thyristors
Tunneling
Voltage
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Summary:A high source-coupling ratio design for full-featured EEPROM composed of one-transistor split-gate cells with a cell area of less than 22 F/sup 2/ is proposed. This is in contrast to a traditional cell that requires an extra select transistor and is not area economic when compared to the new design cell. In this design, the cell adopts poly-poly Fowler-Nordheim tunneling to erase, and an inhibited source voltage is used for the unselected cell to achieve bit erase. It has demonstrated excellent program and erase disturb margins and passed 300 k program/erase (P/E) cycling test. It was found that after P/E cycling stress, the cell gains a better erase disturb immunity.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2004.830277