Work function tuning of fully silicided NiSi metal gates using a TiN capping layer

This paper investigates a new way of tuning the work function of fully silicided (FUSI) NiSi metal gates for dual-gate CMOS using a TiN capping layer on Ni to control the poly-Si dopant distribution during FUSI formation. In addition, by comparing the work function change of NiSi FUSI with and witho...

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Bibliographic Details
Published in:IEEE electron device letters 2004-09, Vol.25 (9), p.610-612
Main Authors: Sim, J.H., Wen, H.C., Lu, J.P., Kwong, D.L.
Format: Article
Language:English
Subjects:
Annealing
Applied sciences
Capacitance
Capping
Degradation
Design. Technologies. Operation analysis. Testing
Dielectric substrates
Electrodes
Electronics
Exact sciences and technology
Gates
Integrated circuits
Intermetallics
Leakage current
MOS devices
Nickel silicide
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicidation
Silicides
Tin
Tuning
Voltage
Work functions
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Summary:This paper investigates a new way of tuning the work function of fully silicided (FUSI) NiSi metal gates for dual-gate CMOS using a TiN capping layer on Ni to control the poly-Si dopant distribution during FUSI formation. In addition, by comparing the work function change of NiSi FUSI with and without TiN capping, we provide clear evidence that dopants at the gate electrode and dielectric interface are responsible for the work function change. The TiN capping layer causes no degradation to the underlying gate dielectric in terms of fixed-oxide charge, gate leakage current, and time-dependent dielectric breakdown characteristics.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2004.833840