Fabrication of high-quality p-MOSFET in Ge grown heteroepitaxially on Si

We have successfully demonstrated high-performance p-MOSFETs in germanium grown directly on Si using a novel heteroepitaxial growth technique, which uses multisteps of hydrogen annealing and growth to confine misfit dislocations near the Ge-Si interface, thus not threading to the surface as expected...

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Bibliographic Details
Published in:IEEE electron device letters 2005-05, Vol.26 (5), p.311-313
Main Authors: Nayfeh, A., Chi On Chui, Yonehara, T., Saraswat, K.C.
Format: Article
Language:English
Subjects:
Anneal
Annealing
Applied sciences
Atomic force microscopy
Compound structure devices
Cross sections
Devices
Dielectrics
dislocations
effective field
effective mobility
Electrodes
Electronics
Exact sciences and technology
Fabrication
Gates
Germanium
germanium oxynitride (GOI)
heteroepitaxy
Hydrogen
mobility
MOS devices
MOSFET circuits
Oxynitrides
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Silicon compounds
Transistors
Transmission electron microscopy
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Summary:We have successfully demonstrated high-performance p-MOSFETs in germanium grown directly on Si using a novel heteroepitaxial growth technique, which uses multisteps of hydrogen annealing and growth to confine misfit dislocations near the Ge-Si interface, thus not threading to the surface as expected in this 4.2% lattice-mismatched system. We used a low thermal budget process with silicon dioxide on germanium oxynitride (GeO/sub x/N/sub y/) gate dielectric and Si/sub 0.75/Ge/sub 0.25/ gate electrode. Characterization of the device using cross-sectional transmission electron microscopy and atomic force microscopy at different stages of the fabrication illustrates device-quality interfaces that yielded hole effective mobility as high as 250 cm/sup 2//Vs.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2005.846578