Aggressively scaled ultra thin undoped HfO/sub 2/ gate dielectric (EOT<0.7 nm) with TaN gate electrode using engineered interface layer

The ultrathin HfO/sub 2/ gate dielectric (EOT

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2005-07, Vol.26 (7), p.454-457
Main Authors: Changhwan Choi, Chang-Yong Kang, Se Jong Rhee, Akbar, M.S., Krishnan, S.A., Manhong Zhang, Hyoung-Sub Kim, Tackhwi Lee, Ok, I., Feng Zhu, Lee, J.C.
Format: Article
Language:English
Subjects:
Annealing
CMOS technology
Dielectric materials
Electrodes
Fabrication
Hafnium oxide
HfO
Leakage current
low-k interface layer
Nitrogen
Oxidation
oxygen-scavenging
Scalability
Thickness control
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The ultrathin HfO/sub 2/ gate dielectric (EOT
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2005.851240