MOSFET design for forward body biasing scheme

Forward body biasing is a solution for continued scaling of bulk-Si CMOS technology. In this letter, the dependence of 30-nm-gate MOSFET performance on body bias is experimentally evaluated for devices with various channel-doping profiles to provide guidance for channel engineering in a forward body...

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Bibliographic Details
Published in:IEEE electron device letters 2006-05, Vol.27 (5), p.387-389
Main Authors: Hokazono, A., Balasubramanian, S., Ishimaru, K., Ishiuchi, H., Tsu-Jae King Liu, Chenming Hu
Format: Article
Language:English
Subjects:
Applied sciences
Body bias
Channels
CMOS
CMOS technology
CMOSFETs
Design. Technologies. Operation analysis. Testing
Devices
Dielectric substrates
Electrodes
Electronics
Exact sciences and technology
forward bias
Gates
Integrated circuits
Ion implantation
MOS devices
MOSFET
MOSFET circuits
MOSFETs
Optimization
Power engineering and energy
Research and development
reverse bias
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Simulation
substrate bias
Transistors
Virtual reality
work function
Work functions
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Summary:Forward body biasing is a solution for continued scaling of bulk-Si CMOS technology. In this letter, the dependence of 30-nm-gate MOSFET performance on body bias is experimentally evaluated for devices with various channel-doping profiles to provide guidance for channel engineering in a forward body-biasing scheme. Furthermore, simulations of 10-nm-gate CMOS (hp22-nm node) devices are performed to study the optimal channel-doping profile and gate work function engineering for a forward biasing scheme.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2006.873382