SONOS-type flash memory using an HfO/sub 2/ as a charge trapping layer deposited by the sol-gel spin-coating method

In this letter, the authors fabricate the silicon-oxide-nitride-oxide-silicon (SONOS)-like memory using an HfO 2 as charge trapping layer deposited by a very simple sol-gel spin-coating method and 900 degC 1-min rapid thermal annealing. They examine the quality of sol-gel HfO 2 charge trapping layer...

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Bibliographic Details
Published in:IEEE electron device letters 2006-08, Vol.27 (8), p.653-655
Main Authors: You, Hsin-Chiang, Hsu, Tze-Hsiang, Ko, Fu-Hsiang, Huang, Jiang-Wen, Yang, Wen-Luh, Lei, Tan-Fu
Format: Article
Language:English
Subjects:
Charge
Charge retention
Coatings
Deposition
Devices
Durability
Electron traps
Endurance
Flash memory
Hafnium oxide
Material storage
Nonvolatile memory
Silicon
silicon-oxide-nitride-oxide-silicon (SONOS)-like memory
Sol gel process
sol-gel spin coating
SONOS devices
Transistors
Trapping
Tunneling
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Summary:In this letter, the authors fabricate the silicon-oxide-nitride-oxide-silicon (SONOS)-like memory using an HfO 2 as charge trapping layer deposited by a very simple sol-gel spin-coating method and 900 degC 1-min rapid thermal annealing. They examine the quality of sol-gel HfO 2 charge trapping layer by X-ray photoemission spectroscopy, Id-Vg, charge retention, and endurance. The threshold voltage shift is 1.2 V for the sol-gel HfO 2 trapping layer. The sol-gel HfO 2 film can form a deep trap layer to trap electrons for the SONOS-like memory. Therefore, the sol-gel device exhibits the long charge retention time and good endurance performance. The charge retention time is 10 4 s with only 6% charge loss and long endurance program/erase cycles up to 10 5
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2006.879026