Impact of Channel Dangling Bonds on Reliability Characteristics of Flash Memory on Poly-Si Thin Films

In this letter, we fabricated the poly-Si-oxide-nitride-oxide-silicon (SONOS)-type Flash memories on polycrystalline-silicon thin films and found that dangling bonds presented along the grain boundaries in the channel significantly influence their reliability characteristics in the aspects of charge...

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Bibliographic Details
Published in:IEEE electron device letters 2007-04, Vol.28 (4), p.267-269
Main Authors: LIN, Yu-Hsien, CHIEN, Chao-Hsin, CHOU, Tung-Huan, CHAO, Tien-Sheng, LEI, Tan-Fu
Format: Article
Language:English
Subjects:
Applied sciences
Associate members
Channels
Chaos
Charge
Crystal defects
Crystallization
Dangling bonds
Design. Technologies. Operation analysis. Testing
Disturbances
Drains
Electron traps
Electronics
Exact sciences and technology
flash memories
Flash memory
Flash memory (computers)
Gates
Grain boundaries
Integrated circuits
Integrated circuits by function (including memories and processors)
Passivation
Plasma properties
poly-Si-oxide-nitride-oxide-silicon (SONOS)-type memories
polycrystalline-silicon thin-film transistor (poly-Si-TFT)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thermal stresses
Thin film transistors
Thin films
Transistors
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Summary:In this letter, we fabricated the poly-Si-oxide-nitride-oxide-silicon (SONOS)-type Flash memories on polycrystalline-silicon thin films and found that dangling bonds presented along the grain boundaries in the channel significantly influence their reliability characteristics in the aspects of charge storage, drain disturbance, and gate disturbance. Employing a powerful defect passivation technique, i.e., NH 3 plasma treatment, the charge storage capability was clearly observed to be remarkably improved. Even so, the hydrogenated polycrystalline-silicon thin-film transistors (poly-Si-TFTs) still suffered from serious drain and gate disturbances, which exhibited behaviors that are quite specific and undoubtedly distinct from those observed in the conventional SONOS-type memories on single crystalline substrates
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2007.891789