50-nm T-Gate InAlAs/InGaAs Metamorphic HEMTs With Low Noise and High f Characteristics

We report 50-nm T-gate metamorphic high-electron mobility transistors (MHEMTs) with low noise figure and high characteristics. The 30 mumtimes2 MHEMT shows a drain current density of 690 mA/mm, a g m,max of 1270 mS/mm, an f T of 489 GHz, and an of 422 GHz. In the frequency range of 59-61 GHz, the no...

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Bibliographic Details
Published in:IEEE electron device letters 2007-07, Vol.28 (7), p.546-548
Main Authors: Lim, Byeong Ok, Lee, Mun Kyo, Baek, Tae Jong, Han, Min, Kim, Sung Chan, Rhee, Jin-Koo
Format: Article
Language:English
Subjects:
50 nm
Current density
Current gain cutoff frequency
Frequency
HEMTs
Indium compounds
Indium gallium arsenide
low noise
metamorphic high-electron mobility transistor (MHEMT)
mHEMTs
millimeter-wave frequency
MODFETs
Noise figure
Performance gain
Voltage
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Summary:We report 50-nm T-gate metamorphic high-electron mobility transistors (MHEMTs) with low noise figure and high characteristics. The 30 mumtimes2 MHEMT shows a drain current density of 690 mA/mm, a g m,max of 1270 mS/mm, an f T of 489 GHz, and an of 422 GHz. In the frequency range of 59-61 GHz, the noise figure is less than 0.7 dB, and the associated gain was greater than 9 dB at a drain voltage of 1.3 V and a gate voltage of -0.8 V. To our knowledge, the MHEMT shows the best performance in terms of and noise figure among GaAs-based HEMTs.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2007.899442