Sub-0.1-eV Effective Schottky-Barrier Height for NiSi on n-Type Si (100) Using Antimony Segregation

We report a new method of forming nickel silicide (NiSi) on n-Si with low contact resistance, which achieves a Schottky barrier height of as low as 0.074 eV. Antimony (Sb) and nickel were introduced simultaneously and annealed to form NiSi on n-Si (100). Sb dopant atoms were found to segregate at th...

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Bibliographic Details
Published in:IEEE electron device letters 2007-08, Vol.28 (8), p.703-705
Main Authors: Hoong-Shing Wong, Lap Chan, Samudra, G., Yee-Chia Yeo
Format: Article
Language:English
Subjects:
Annealing
Antimony
Applied sciences
CMOS process
Contact resistance
Current measurement
Design. Technologies. Operation analysis. Testing
Devices
Electronics
Exact sciences and technology
Fabrication
Fluid flow measurement
Integrated circuits
Nickel
Nickel silicide
NiSi
Rectification
Schottky barrier (SB)
Schottky barriers
segregation
Segregations
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicides
Silicon
Voltage
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Summary:We report a new method of forming nickel silicide (NiSi) on n-Si with low contact resistance, which achieves a Schottky barrier height of as low as 0.074 eV. Antimony (Sb) and nickel were introduced simultaneously and annealed to form NiSi on n-Si (100). Sb dopant atoms were found to segregate at the NiSi/Si interface. The devices with Sb segregation show complete nickel monosilicide formation on n-Si (100) and a close-to-unity rectification ratio. The rectification ratio R c is defined to be the ratio of the forward current to the reverse current, where the forward and reverse currents are measured using forward and reverse bias voltages, respectively, having the same magnitude of 0.5 V. This process is also compatible and easily integrated in a CMOS fabrication process flow.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2007.901668