Radio-Frequency-Noise Characterization and Modeling of Type-II InP-GaAsSb DHBT

This letter presents the first characterization of radio-frequency noise of type-II InP-GaAsSb double-heterojunction bipolar transistors (DHBTs) from 2 to 24 GHz. Its small-signal noise equivalent model is developed and verified with the experimental data. The noise performance of the type-II InP-Ga...

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Bibliographic Details
Published in:IEEE electron device letters 2008-01, Vol.29 (1), p.21-23
Main Authors: Yu-Ju Chuang, Cimino, K., Stuenkel, M., Snodgrass, W., Feng, M.
Format: Article
Language:English
Subjects:
Applied sciences
Bipolar transistors
Circuit noise
Contact resistance
Cutoff frequency
Devices
DH-HEMTs
Direct current
Electrical resistance measurement
Electronics
Equivalence
Exact sciences and technology
Gain
Heterojunction bipolar transistors
Heterojunction bipolar transistors (HBTs)
Low-frequency noise
Noise
Noise figure
Noise measurement
noise model
Radio frequency
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:This letter presents the first characterization of radio-frequency noise of type-II InP-GaAsSb double-heterojunction bipolar transistors (DHBTs) from 2 to 24 GHz. Its small-signal noise equivalent model is developed and verified with the experimental data. The noise performance of the type-II InP-GaAsSb HBT is also compared with the type-I InP-InGaAs HBT with similar cutoff frequencies larger than 300 GHz. The analysis shows that the particular type-II transistor under test has higher noise than its counterpart type-I device primarily due to the difference of dc current gain.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2007.912017