Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

The growth of AlGaN/GaN-based heterostructure on Si(110) substrates by molecular beam epitaxy using ammonia as the nitrogen precursor is reported. The structural, optical, and electrical properties of such heterostructure are assessed and are quite similar to the ones obtained on Si(111). A 2-D elec...

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Bibliographic Details
Published in:IEEE electron device letters 2008-11, Vol.29 (11), p.1187-1189
Main Authors: Cordier, Y., Moreno, J.-C., Baron, N., Frayssinet, E., Chenot, S., Damilano, B., Semond, F.
Format: Article
Language:English
Subjects:
AlGaN
Aluminum gallium nitride
Aluminum gallium nitrides
Applied sciences
Charge carrier density
Compound structure devices
Devices
Electrical properties
Electron mobility
Electron optics
Electronics
Exact sciences and technology
Gallium nitride
Gallium nitrides
GaN
HEMTs
Heterostructures
high-electron-mobility transistor (HEMT)
Microelectronic fabrication (materials and surfaces technology)
MODFETs
Molecular beam epitaxial growth
Molecular beam epitaxy
Nitrogen
Optical properties
Precursors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Substrates
Transistors
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Summary:The growth of AlGaN/GaN-based heterostructure on Si(110) substrates by molecular beam epitaxy using ammonia as the nitrogen precursor is reported. The structural, optical, and electrical properties of such heterostructure are assessed and are quite similar to the ones obtained on Si(111). A 2-D electron gas is formed at the Al 0.3 Ga 0.7 N/GaN interface with a sheet carrier density of 9.6 times 10 12 cm -2 and a mobility of 1980 cm 2 /V middots at room temperature. Preliminary results concerning high-electron-mobility-transistor static characteristics are presented and compared with that of devices realized on other orientations of silicon.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.2005211