Electrical Properties of \hbox\hbox/ \hbox Interfaces and GdGaO Dielectrics in GaAs-Based MOSFETs

Electrical properties of Ga 2 O 3 /GaAs interfaces with GdGaO cap dielectrics used in recent enhancement-mode GaAs-based NMOSFETs which perform in line with theoretical model predictions are presented. Capacitors with GdGaO thickness ranging from 3.0 to 18 nm (0.9 les EOT les 3.9 nm) have been chara...

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Bibliographic Details
Published in:IEEE electron device letters 2009-01, Vol.30 (1), p.2-4
Main Authors: Passlack, M., Droopad, R., Fejes, P., Lingquan Wang
Format: Article
Language:English
Subjects:
Capacitance measurement
Capacitance-voltage characteristics
Capacitors
Dielectric constant
Dielectric measurements
GaAs MOSFET
Gallium arsenide
hbox{Ga}_{2}\hbox{O}_{3}
III-V MOSFET
III-V semiconductor
Interface states
MOSFETs
oxide/semiconductor interface
Predictive models
Thickness measurement
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Summary:Electrical properties of Ga 2 O 3 /GaAs interfaces with GdGaO cap dielectrics used in recent enhancement-mode GaAs-based NMOSFETs which perform in line with theoretical model predictions are presented. Capacitors with GdGaO thickness ranging from 3.0 to 18 nm (0.9 les EOT les 3.9 nm) have been characterized by capacitance-voltage measurements. Midgap interface state density D it , effective workfunction phi m , fixed charge Q f , dielectric constant kappa, and low field leakage current density are 2 times10 11 cm -2 middoteV -1 , 4.93 eV, -8.9 times10 11 cm -2 , 19.5, and 10 -9 - 10 -8 A/cm 2 , respectively. The presence of interfacial Gd was confirmed to dramatically degrade electrical interface properties. The data illuminate the intimate interplay between heterostructure and interface engineering to achieve optimum MOSFET operation.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2008.2007579