Time-Dependent Dielectric Breakdown of \hbox \hbox-Doped High- k/Metal Gate Stacked NMOSFETs

• Published in: IEEE electron device letters 2009-03, Vol.30 (3), p.298-301
• Main Authors: In-Shik Han, Won-Ho Choi, Hyuk-Min Kwon, Min-Ki Na, Ying-Ying Zhang, Yong-Goo Kim, Jin-Suk Wang, Chang Yong Kang, Bersuker, G., Byoung Hun Lee, Yoon Ha Jeong, Hi-Deok Lee, Jammy, R.
• Format: Article
• Language: English
• Subjects: BTI; CMOS technology; Dielectric breakdown; Dielectric substrates; Hafnium oxide; High K dielectric materials; high- k dielectric; High-K gate dielectrics; Jamming; Lanthanide Oxide (\hbox{La}_{2}\hbox{O}_{3}); Leakage current; MOSFETs; Stress; stress-induced leakage current (SILC); time-dependent dielectric breakdown (TDDB)
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2008.2012272

Time-dependent dielectric breakdown (TDDB) characteristics of La 2 O 3 -doped high-k dielectric in Hf-based high-k/TaN metal gate stack were studied. Unlike the abrupt breakdown in the conventional SiO 2 , dielectric breakdown behaviors of La-incorporated HfON and HfSiON dielectrics show progressive breakdown characteristics. Moreover, the extracted Weibull slope beta of breakdown distribution is in the range of 0.87-1.19, and it is independent on capacitor areas and stress conditions. Moreover, field dependence of T BD and stress-induced leakage current strongly suggest that the E-model is more applicable to explain in TDDB of La-incorporated high-k dielectric in Hf-based high-k/metal gate stack structure.