Transparent Zinc Oxide Gate Metal-Oxide-Semiconductor Field-Effect Transistor for High-Responsivity Photodetector

We report a new structure of high-responsivity photodetectors that utilizes the transparent and metallic zinc oxide (ZnO) gate in bulk silicon metal-oxide-semiconductor field-effect-transistor photodetectors. The device has a small optical window only in the channel region, and all other regions (de...

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Bibliographic Details
Published in:IEEE electron device letters 2009-05, Vol.30 (5), p.493-495
Main Authors: LEE, Eujune, MOON, Dong-Il, YANG, Ji-Hwan, KEONG SU LIM, CHOI, Yang-Kyu
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
FETs
Field-effect phototransistor
Lighting
MOSFET circuits
Optical devices
Optoelectronic devices
Photoconductivity
photodetector
Photodetectors
Protection
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Stimulated emission
Transistors
transparent gate
Zinc oxide
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Summary:We report a new structure of high-responsivity photodetectors that utilizes the transparent and metallic zinc oxide (ZnO) gate in bulk silicon metal-oxide-semiconductor field-effect-transistor photodetectors. The device has a small optical window only in the channel region, and all other regions (depletion) are protected from external light. Whereas the amplification of photocurrent by external light was not significant at the floated or positively biased substrate, the photocurrent was enhanced at the grounded or negatively biased substrate due to the decrement of the recombination rate in the n-channel MOSFET. Responsivity was in excess of 1500 A/W under white-light illumination, which is higher than that of conventional photodetectors with the semitransparent polycrystalline-silicon gate.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2009.2016765