14-GHz GaNAsSb Unitraveling-Carrier 1.3- \mu\hbox Photodetectors Grown by RF Plasma-Assisted Nitrogen Molecular Beam Epitaxy

We report on picosecond pulsed response and 3-dB cutoff frequency of 1.3-μm GaNAsSb unitraveling-carrier photodetectors (PDs) grown by molecular beam epitaxy using a radio-frequency plasma-assisted nitrogen source. The 0.1-mum -thick GaNAsSb photoabsorption layer contains 3.5% of N and 9% of Sb, res...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2009-06, Vol.30 (6), p.590-592
Main Authors: Tan, Kian Hua, Yoon, Soon F., Fedderwitz, Sascha, Stohr, Andreas, Loke, Wan Khai, Wicaksono, Satrio, Ng, Tien Khee, Weiss, Mario, Poloczek, Artur, Rymanov, Vitaly, Patra, Ardhendu S., Tangdiongga, Eduward, Jager, Dieter
Format: Article
Language:English
Subjects:
1.3- mu\hbox{m} PDs
Cutoff frequency
Dark current
Dilute-nitride-based photodetectors (PDs)
Gallium arsenide
GaNAsSb
Molecular beam epitaxial growth
molecular beam epitaxy (MBE)
Nitrogen
Photodetectors
Photonic band gap
Plasma sources
Radio frequency
Substrates
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report on picosecond pulsed response and 3-dB cutoff frequency of 1.3-μm GaNAsSb unitraveling-carrier photodetectors (PDs) grown by molecular beam epitaxy using a radio-frequency plasma-assisted nitrogen source. The 0.1-mum -thick GaNAsSb photoabsorption layer contains 3.5% of N and 9% of Sb, resulting in a bandgap of 0.88 eV. The dark current densities at 0 and -9 V are 6 and 34 mA/cm 2 , respectively. The GaNAsSb UTC PDs exhibit a temporal response width of 46 ps and a record 3-dB cutoff frequency of 14 GHz at -9 V.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2009.2018290