MILC-TFT With High- \kappa Dielectrics for One-Time-Programmable Memory Application

In this letter, for the first time, one-time-programmable (OTP) memory fabricated on the low-temperature poly-Si p-channel thin-film transistor (TFT) with metal-induced lateral-crystallization channel layer and high-kappa dielectrics is demonstrated. The state of this OTP memory can be identified by...

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Bibliographic Details
Published in:IEEE electron device letters 2009-09, Vol.30 (9), p.954-956
Main Authors: CHIANG, Tsung-Yu, MA, Ming-Wen, WU, Yi-Hong, KUO, Po-Yi, WANG, Kuan-Ti, LIAO, Chia-Chun, YEH, Chi-Ruei, CHAO, Tien-Sheng
Format: Article
Language:English
Subjects:
Applied sciences
Channels
Chaos
Circuits
Crystallization
Current measurement
Dielectric devices
Dielectric measurements
Dielectrics
Drains
Electric potential
Electronics
Exact sciences and technology
Gate-induced drain leakage (GIDL)
Hafnium oxide
Leakage current
metal-induced lateral crystallization (MILC)
Nonvolatile memory
one-time programmable (OTP)
Programming
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thin film transistors
thin-film transistor (TFT)
Threshold voltage
Transistors
Voltage
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Summary:In this letter, for the first time, one-time-programmable (OTP) memory fabricated on the low-temperature poly-Si p-channel thin-film transistor (TFT) with metal-induced lateral-crystallization channel layer and high-kappa dielectrics is demonstrated. The state of this OTP memory can be identified by the scheme of gate-induced drain leakage current measurement. The OTP-TFT memory has good electrical characteristics in terms of low threshold voltage V th ~ -0.78 V, excellent subthreshold swing ~ 105 mV/dec, low operation voltage, faster programming speeds, and excellent reliability characteristics.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2009.2027035