Oxygen-Soluble Gate Electrodes for Prolonged High- \kappa Gate-Stack Reliability

We propose the use of high-oxygen-solubility metalgate electrodes as a material of choice for high- gate stacks in order to prolong the time-dependent-dielectric-breakdown (BD) reliability. Our findings on n-channel metal-oxide-semiconductor devices with these gate electrodes reveal that the applica...

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Bibliographic Details
Published in:IEEE electron device letters 2011-03, Vol.32 (3), p.252-254
Main Authors: Raghavan, Nagarajan, Pey, Kin Leong, Xing Wu, Wenhu Liu, Xiang Li, Bosman, Michel, Kauerauf, Thomas
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Design for reliability (DFR)
Devices
Electrodes
Electronics
Exact sciences and technology
Gates (circuits)
high- kappa (HK)
Ions
Logic gates
Materials
Metals
Oxygen ions
oxygen vacancy
Percolation
Reliability
Reservoirs
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
soft breakdown (SBD)
solubility
Stacks
time dependent dielectric breakdown (TDDB)
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Summary:We propose the use of high-oxygen-solubility metalgate electrodes as a material of choice for high- gate stacks in order to prolong the time-dependent-dielectric-breakdown (BD) reliability. Our findings on n-channel metal-oxide-semiconductor devices with these gate electrodes reveal that the application of low negative bias stress after a soft-BD (SBD) event helps to restore the oxygen ions and passivate the oxygen vacancy traps that comprise the percolation path. This can be a simple yet effective designfor-reliability tool to initiate the self-repair of the percolation path and operate the circuit for a prolonged period after repair. The only requirement for achieving this SBD reversibility is to choose gate electrodes that can serve as good oxygen reservoirs.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2099096