Thermal Stability and Dopant Segregation for Schottky Diodes With Ultrathin Epitaxial \hbox

The Schottky barrier height (SBH) of an ultrathin epitaxial NiSi 2-y film grown on Si(100) is modified significantly by means of dopant segregation (DS). The DS process begins with the NiSi 2-y formation and is followed by dopant implantation and drive-in annealing. The rapid lattice restoration and...

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Bibliographic Details
Published in:IEEE electron device letters 2011-08, Vol.32 (8), p.1029-1031
Main Authors: Jun Luo, Xindong Gao, Zhi-Jun Qiu, Jun Lu, Dongping Wu, Chao Zhao, Junfeng Li, Dapeng Chen, Hultman, L., Shi-Li Zhang
Format: Article
Language:English
Subjects:
Annealing
Dopant segregation (DS)
Epitaxial growth
epitaxy
hbox{NiSi}_{2}
morphological stability
Schottky barrier height (SBH)
Schottky barriers
Schottky diodes
Silicides
Silicon
Thermal stability
ultrathin
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Summary:The Schottky barrier height (SBH) of an ultrathin epitaxial NiSi 2-y film grown on Si(100) is modified significantly by means of dopant segregation (DS). The DS process begins with the NiSi 2-y formation and is followed by dopant implantation and drive-in annealing. The rapid lattice restoration and superior morphological stability upon heat treatment up to 800°C allow the epitaxial NiSi 2-y film to take full advantage of the DS process. For drive-in annealing below 750°C , the effective SBH is altered to ~ 0.9-1 eV for both electrons and holes by B-DS and As-DS, respectively, without deteriorating the integrity of the NiSi 2-y film.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2157301