LDMOS Transistor High-Frequency Performance Enhancements by Strain

The effects of mechanical stress on the dc and high-frequency performances of laterally diffused MOS (LDMOS) transistors with different layout structures were investigated by using the wafer bending method. A 3.1% peak cutoff frequency ( fT ) enhancement is achieved for the multifinger device under...

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Bibliographic Details
Published in:IEEE electron device letters 2012-04, Vol.33 (4), p.471-473
Main Authors: CHEN, Kun-Ming, HUANG, Guo-Wei, CHEN, Bo-Yuan, CHIU, Chia-Sung, HSIAO, Chih-Hua, LIAO, Wen-Shiang, CHEN, Ming-Yi, YANG, Yu-Chi, WANG, Kai-Li, CHEE WEE LIU
Format: Article
Language:English
Subjects:
Annular layout
Applied sciences
biaxial tensile strain
Capacitance
Channels
Compound structure devices
cutoff frequency
Devices
Direct current
Electronics
Exact sciences and technology
Gates
laterally diffused MOS (LDMOS)
Layout
Logic gates
mechanical stress
Performance evaluation
Radio frequency
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Strain
Transistors
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Summary:The effects of mechanical stress on the dc and high-frequency performances of laterally diffused MOS (LDMOS) transistors with different layout structures were investigated by using the wafer bending method. A 3.1% peak cutoff frequency ( fT ) enhancement is achieved for the multifinger device under 0.051% biaxial tensile strain. For LDMOS with annular layout, the fT enhancement is increased to 3.7% due to the various channel directions. Our results suggest the strain technology can be adopted in LDMOS for RF applications. The transconductance and gate capacitance were also extracted to clearly demonstrate the fT variations.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2182494