MOSFET Drain Current Noise Modeling With Effective Gate Overdrive and Junction Noise

In this letter, a drain current noise model that includes the channel thermal noise and the shot noise generated at the source-bulk junction and the drain-bulk junction is presented. A unified analytical expression is derived to ensure excellent continuity with smooth transition of drain current noi...

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Bibliographic Details
Published in:IEEE electron device letters 2012-08, Vol.33 (8), p.1117-1119
Main Authors: Chan, L. H. K., Yeo, K. S., Chew, K. W. J., Ong, S. N., Loo, X. S., Boon, C. C., Do, M. A.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
High-frequency noise
Integrated circuit modeling
Junctions
Logic gates
moderate inversion (MI)
MOSFET
Noise
Semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
subthreshold
Thermal noise
Transistors
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Description
Summary:In this letter, a drain current noise model that includes the channel thermal noise and the shot noise generated at the source-bulk junction and the drain-bulk junction is presented. A unified analytical expression is derived to ensure excellent continuity with smooth transition of drain current noise from weak- to strong-inversion regimes, including the moderate-inversion region. Excellent agreement between simulated and extracted noise data has shown that the proposed model is accurate over different dimensions and operating conditions.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2203781