hbox\hbox\hbox as a Ferroelectric: A Single-Element Low-Voltage Dynamic Memory

Ge 2 Sb 2 Te 5 (GST) is normally employed as a current-driven and heat-triggered structural phase-change material in multielement phase-change memories. This work identifies GST as a ferroelectric material suitable for a single-element memory operating at low voltages without heat-based transformati...

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Bibliographic Details
Published in:IEEE electron device letters 2012-09, Vol.33 (9), p.1231-1233
Main Authors: Sang Hyeon Lee, Moonkyung Kim, Byung-ki Cheong, Jo-Won Lee, Tiwari, S.
Format: Article
Language:English
Subjects:
Depolarization field
Dielectric constant
DRAM
FCC
ferroelectric
Ferroelectric materials
hbox{Ge}_{2}\hbox{Sb}_{2}\hbox{Te}_{5} (GST)
Logic gates
memory
polarization
Random access memory
single element
Temperature measurement
Threshold voltage
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Summary:Ge 2 Sb 2 Te 5 (GST) is normally employed as a current-driven and heat-triggered structural phase-change material in multielement phase-change memories. This work identifies GST as a ferroelectric material suitable for a single-element memory operating at low voltages without heat-based transformation. With GST as a floating gate, hysteretic behavior that is opposite of that arising from charge trapping and consistent with ferroelectric phase transition is characterized. Saturating memory window of ~1 V under ±4 V cycling and retention times of hundreds of seconds constrained by depolarization are observed. Extracted remnant polarization is ~0.13 μC/cm 2 . The result suggests potential for embedded use with the advantages of a retention time that is competitive or better than DRAMs, a single-element transistorlike structure and technologically easy integration.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2204721