Understanding the Superlinear Onset of Tunnel-FET Output Characteristic

In this letter, we report that the source and channel Fermi-Dirac distributions in interband-tunneling-controlled transistors play a fundamental role on the modulation of the injected current. We explain the superlinear onset of the output characteristics based on the occupancy function modulation....

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Bibliographic Details
Published in:IEEE electron device letters 2012-11, Vol.33 (11), p.1523-1525
Main Authors: De Michielis, L., Lattanzio, L., Ionescu, A. M.
Format: Article
Language:English
Subjects:
Analytical models
Applied sciences
Band-to-band tunneling (BTBT)
Circuit properties
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
FETs
Modulation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
steep swing switch
subthermal subthreshold swing
subthreshold slope
Switching, multiplexing, switched capacity circuits
Transistors
tunnel-FET (TFET)
Tunneling
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Summary:In this letter, we report that the source and channel Fermi-Dirac distributions in interband-tunneling-controlled transistors play a fundamental role on the modulation of the injected current. We explain the superlinear onset of the output characteristics based on the occupancy function modulation. Thus, we point out that, along with the tunneling barrier transparency, the availability of carriers and empty states, at the beginning and at the end of the tunneling path, respectively, should be always taken into account for a proper modeling of tunnel FETs.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2212175