AlGaN-GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With Very High- k Oxynitride \hbox \hbox Gate Dielectric

We investigated AlGaN-GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with high-permittivity (high-k) oxynitride TaO x N y gate dielectric (k ~24) obtained by sputtering deposition. The MIS-HEMTs show excellent pulsed current-voltage characteristics, small off-leakag...

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Bibliographic Details
Published in:IEEE electron device letters 2013-03, Vol.34 (3), p.375-377
Main Authors: Sato, T., Okayasu, J., Takikawa, M., Suzuki, Toshi-kazu
Format: Article
Language:English
Subjects:
AlGaN-GaN
Aluminum gallium nitride
Dielectrics
Gallium nitride
hbox{TaO}_{x}\hbox{N}_{y}
HEMTs
High K dielectric materials
Logic gates
metal-insulator-semiconductor (MIS)
MODFETs
oxynitride
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Summary:We investigated AlGaN-GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with high-permittivity (high-k) oxynitride TaO x N y gate dielectric (k ~24) obtained by sputtering deposition. The MIS-HEMTs show excellent pulsed current-voltage characteristics, small off-leakage currents ( 10 10 ), and favorable threshold voltage stabilities. From comparisons with MIS-HEMTs with TaO x gate dielectric, we conclude that N incorporation in gate dielectric can suppress current collapse and deep-level states.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2237499