Air-Gap Through-Silicon Vias

This letter reports for the first time the fabrication and characterization of through-silicon vias (TSVs) using air-gap insulators to enable high-performance 3-D integration. To address the challenge in fabricating extremely high-aspect-ratio air gaps, a CMOS-compatible sacrificial technology based...

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Bibliographic Details
Published in:IEEE electron device letters 2013-03, Vol.34 (3), p.441-443
Main Authors: Huang, Cui, Chen, Qianwen, Wang, Zheyao
Format: Article
Language:English
Subjects:
Air gaps
Applied sciences
Capacitance
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Insulation
Integrated circuits
Microelectronic fabrication (materials and surfaces technology)
Plugs
poly (propylene carbonate) (PPC)
pyrolysis
reliability
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Stress
Substrates
through-silicon via (TSV)
Through-silicon vias
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Summary:This letter reports for the first time the fabrication and characterization of through-silicon vias (TSVs) using air-gap insulators to enable high-performance 3-D integration. To address the challenge in fabricating extremely high-aspect-ratio air gaps, a CMOS-compatible sacrificial technology based on pyrolysis of poly (propylene carbonate) has been developed, upon which air-gap TSVs have been successfully achieved. The measured capacitance density and leakage current density of air-gap TSVs are 1.22 nF/cm 2 and 10 nA/cm 2 , respectively, about one order and two orders lower in magnitude than TSVs using SiO 2 insulators.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2239601