Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO 2 fluid treatment

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Bibliographic Details
Published in:IEEE electron device letters 2013-05, Vol.34 (5), p.617-619
Main Authors: Chang, Kuan-Chang, Chu, Tian-Jian, Chen, Jian-Yu, Su, Yu-Ting, Jiang, Jhao-Ping, Chen, Kai-Huang, Huang, Hui-Chun, Syu, Yong-En, Gan, Der-Shin, Sze, Simon M., Pan, Chih-Hung, Chang, Ting-Chang, Tsai, Tsung-Ming, Zhang, Rui, Lou, Jen-Chung, Young, Tai-Fa, Chen, Jung-Hui, Shih, Chih-Cheng
Format: Article
Language:English
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2251995