Improvement of Data Retention During Long-Term Use by Suppressing Conductive Filament Expansion in Bipolar-ReRAM

We investigate, for the first time, the expansion of resistive random access memory (ReRAM) conductive filaments during pulse cycles, which may cause retention failure after cycling endurance. We find that filament size becomes larger gradually because of oxygen diffusion from the region surrounding...

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Bibliographic Details
Published in:IEEE electron device letters 2013-06, Vol.34 (6), p.762-764
Main Authors: Ninomiya, Takeki, Muraoka, Shunsaku, Wei, Zhiqiang, Yasuhara, Ryutaro, Katayama, Koji, Takagi, Takeshi
Format: Article
Language:English
Subjects:
Conductive filament (CF)
endurance
Heating systems
Ions
joule heating
Power systems
Random access memory
Resistance
resistive switching random access memory (RAM)
retention
Switches
Temperature measurement
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Summary:We investigate, for the first time, the expansion of resistive random access memory (ReRAM) conductive filaments during pulse cycles, which may cause retention failure after cycling endurance. We find that filament size becomes larger gradually because of oxygen diffusion from the region surrounding a filament during reset operations. To achieve long-term use of ReRAM while avoiding filament expansion, it is the key to control both an electric power and a pulsewidth input at a switching operation. We successfully demonstrate good data retention even after endurance of 100-k cycles with an optimized reset pulse.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2258653