Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs

Current collapse measurements have been performed for AlGaN/GaN high-electron-mobility transistors having identical breakdown voltages but with different field plate (FP) lengths. The results indicated that applying more positive ON-state gate biases resulted in pronounced recovery in the dynamic ON...

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Bibliographic Details
Published in:IEEE electron device letters 2013-11, Vol.34 (11), p.1379-1381
Main Authors: Hasan, Md Tanvir, Asano, Takashi, Tokuda, Hirokuni, Kuzuhara, Masaaki
Format: Article
Language:English
Subjects:
AlGaN/GaN high-electron-mobility transistors (HEMT)
Aluminum gallium nitride
Applied sciences
current collapse
Current measurement
Electronics
Exact sciences and technology
field plate (FP)
Gallium nitride
HEMTs
Logic gates
MODFETs
ON-resistance
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Voltage measurement
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Summary:Current collapse measurements have been performed for AlGaN/GaN high-electron-mobility transistors having identical breakdown voltages but with different field plate (FP) lengths. The results indicated that applying more positive ON-state gate biases resulted in pronounced recovery in the dynamic ON-resistance for the FP device, whereas no gate-bias effects were observed for the device without FP. The mechanism responsible for the reduced current collapse by FP is proposed, in which the key role is played during ON-state by the quick field-effect recovery of partial channel depletion caused by electron trapping at AlGaN surface states between gate and drain.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2280712