Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias

The influence of random telegraph noise (RTN) in MOSFETs on drain current (I d ) during the rise/fall edges of the pulsed gate voltage (V g ) cycle was investigated. We have revealed for the first time that the existence of RTN increases I d fluctuations under dynamic V g by making a comparison betw...

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Bibliographic Details
Published in:IEEE electron device letters 2014-01, Vol.35 (1), p.3-5
Main Authors: Wei Feng, Chun Meng Dou, Niwa, Masaaki, Yamada, Keisaku, Ohmori, Kenji
Format: Article
Language:English
Subjects:
Applied sciences
dynamic gate bias
Electron traps
Electronics
Exact sciences and technology
Histograms
Logic gates
MOSFET
MOSFETs
Noise
Periodic structures
random telegraph noise
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:The influence of random telegraph noise (RTN) in MOSFETs on drain current (I d ) during the rise/fall edges of the pulsed gate voltage (V g ) cycle was investigated. We have revealed for the first time that the existence of RTN increases I d fluctuations under dynamic V g by making a comparison between FETs with and without RTN. The initial trap occupation states before varying V g , which are governed by the RTN profiles, significantly affect the Id values during the rise/fall edges of V g . The revealed effects of RTN with different profiles on I d under dynamic V g will be useful for designing ultrahigh speed circuits.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2288981