Impact of Single Trap Random Telegraph Noise on Heterojunction TFET SRAM Stability

We investigate the effect of a single charge trap random telegraph noise (RTN)-induced degradation in III-V heterojunction tunnel FET (HTFET)-based SRAM. Our analysis focuses on Schmitt trigger (ST) mechanism-based variation tolerant ten-transistor SRAM. We compare iso-area SRAM cell configurations...

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Bibliographic Details
Published in:IEEE electron device letters 2014-03, Vol.35 (3), p.393-395
Main Authors: Pandey, Rahul, Saripalli, Vinay, Kulkarni, Jaydeep P., Narayanan, Vijaykrishnan, Datta, Suman
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Degradation
Design. Technologies. Operation analysis. Testing
electrical noise
Electronics
Exact sciences and technology
Heterojunction TFET
Heterojunctions
Integrated circuits
Integrated circuits by function (including memories and processors)
Noise
random telegraph noise (RTN)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SRAM
SRAM cells
TCAD simulation
Transistors
trap
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Summary:We investigate the effect of a single charge trap random telegraph noise (RTN)-induced degradation in III-V heterojunction tunnel FET (HTFET)-based SRAM. Our analysis focuses on Schmitt trigger (ST) mechanism-based variation tolerant ten-transistor SRAM. We compare iso-area SRAM cell configurations in Si-FinFET and HTFET. Our results show that HTFET ST SRAMs provide significant energy/performance enhancements even in the presence of RTN. For sub-0.2 V operation (Vcc), HTFET ST SRAM offers 15% improvement in read-write noise margins along with better variation immunity from RTN over Si-FinFET ST SRAM. A comparison with iso-area 6T Si-FinFET SRAM with wider size transistors shows 43% improved read noise margin in 10T HTFET ST SRAM at Vcc=0.175 V. In addition, HTFET ST SRAM exhibits 48X lower read access delay and 1.5X reduced power consumption over Si-FinFET ST SRAM operating at their respective Vcc-min.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2014.2300193