Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in Interfacial Layer Formed by In Situ Desorption

Ge MOS devices with about 95% Ge 4+ in HfGeO x interfacial layer are obtained by H 2 O plasma process together with in situ desorption before atomic layer deposition (ALD). The equivalent oxide thickness is scaled down to 0.39 nm; the leakage current is decreased as well. The improvement can be attr...

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Bibliographic Details
Published in:IEEE electron device letters 2014-05, Vol.35 (5), p.509-511
Main Authors: Li, Chen-Chien, Chang-Liao, Kuei-Shu, Liu, Li-Jung, Lee, Tzu-Min, Fu, Chung-Hao, Chen, Ting-Ching, Cheng, Jen-Wei, Lu, Chun-Chang, Wang, Tien-Ko
Format: Article
Language:English
Subjects:
desorption
Ge MOS
GeO
Hafnium compounds
in situ
Leakage currents
Logic gates
MOS devices
Oxidation
Plasmas
Water
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Summary:Ge MOS devices with about 95% Ge 4+ in HfGeO x interfacial layer are obtained by H 2 O plasma process together with in situ desorption before atomic layer deposition (ALD). The equivalent oxide thickness is scaled down to 0.39 nm; the leakage current is decreased as well. The improvement can be attributed to the in situ Ge suboxide desorption process in an ALD chamber at 370 °C. The interface trap density and frequency dispersion need further process development to be reduced.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2014.2310636