Improvement of Long-Term Durability and Bias Stress Stability in p-Type SnO Thin-Film Transistors Using a SU-8 Passivation Layer

We investigate the effects of ambient atmosphere on the electrical performance of p-type tin monoxide (SnO) thin-film transistors (TFTs), and present the effective method for the passivation of SnO TFTs using a SU-8 organic layer. The experimental data shows that the SnO TFTs without a passivation l...

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Bibliographic Details
Published in:IEEE electron device letters 2014-12, Vol.35 (12), p.1260-1262
Main Authors: Han, Young-Joon, Choi, Yong-Jin, Cho, In-Tak, Jin, Sung Hun, Lee, Jong-Ho, Kwon, Hyuck-In
Format: Article
Language:English
Subjects:
bias stress stability
Humidity
long-term durability
P-type SnO TFTs
Passivation
Performance evaluation
Stress
SU-8 passivation layer
Thin film transistors
Tin compounds
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Summary:We investigate the effects of ambient atmosphere on the electrical performance of p-type tin monoxide (SnO) thin-film transistors (TFTs), and present the effective method for the passivation of SnO TFTs using a SU-8 organic layer. The experimental data shows that the SnO TFTs without a passivation layer suffer from the electrical performance degradation under humid environments, which implies that the formation of the passivation layer is necessary in p-type SnO TFTs for the stable operation of the devices. The SU-8 organic layer was successfully incorporated as a passivation layer of SnO TFTs. The SnO TFTs with a SU-8 passivation layer exhibit very similar transfer characteristics with those without a passivation layer, and show much improved long-term durability and bias stress stability compared with the SnO TFTs without a passivation layer under air environments.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2014.2363879