Recess-Free Nonalloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs

We report on a new approach to achieve nonalloyed ohmic contacts with record low resistance in GaN-based transistors. We use upward and reverse grading of Al composition in a polarization-graded field-effect transistor structure to eliminate abrupt heterojunction band offsets and create direct conta...

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Bibliographic Details
Published in:IEEE electron device letters 2015-03, Vol.36 (3), p.226-228
Main Authors: Pil Sung Park, Krishnamoorthy, Sriram, Bajaj, Sanyam, Nath, Digbijoy N., Rajan, Siddharth
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Contact resistance
FETs
Gallium nitride
GaN
HEMTs
HFETs
MODFETs
nonalloyed
Ohmic contacts
polarization grading
PolFETs
regrowth
Resistance
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Summary:We report on a new approach to achieve nonalloyed ohmic contacts with record low resistance in GaN-based transistors. We use upward and reverse grading of Al composition in a polarization-graded field-effect transistor structure to eliminate abrupt heterojunction band offsets and create direct contact to the channel. Total contact resistance of 73 mQ · mm and interfacial resistance of 29 mQ · mm to the 2-D electron gas were obtained. The method adopted here could enable to ultralow-resistance contacts without ohmic recess.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2394503