Inversion in Metal-Oxide-Semiconductor Capacitors on Boron-Doped Diamond

For the advancement of diamond-based electronic devices, the fabrication of metal-oxide-semiconductor field-effect transistors (MOSFETs) is crucial, as this device finds applications in numerous fields of power electronics and high-frequency systems. The MOS capacitor forms the basic building block...

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Bibliographic Details
Published in:IEEE electron device letters 2015-06, Vol.36 (6), p.603-605
Main Authors: Kovi, Kiran Kumar, Vallin, Orjan, Majdi, Saman, Isberg, Jan
Format: Article
Language:English
Subjects:
Aluminum oxide
Boron
Diamonds
Dielectric measurement
Doping
Engineering Science with specialization in Electronics
Engineering Science with specialization in Science of Electricity
Frequency measurement
Inversion
MOS structures
SC-CVD diamond
Semiconductor device measurement
Teknisk fysik med inriktning mot elektricitetslära
Teknisk fysik med inriktning mot elektronik
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Summary:For the advancement of diamond-based electronic devices, the fabrication of metal-oxide-semiconductor field-effect transistors (MOSFETs) is crucial, as this device finds applications in numerous fields of power electronics and high-frequency systems. The MOS capacitor forms the basic building block of the MOSFET. In this letter, we describe planar MOS capacitor structures fabricated with atomic layer deposited aluminum oxide as the dielectric on oxygen-terminated boron-doped diamond substrates with different doping levels. Using capacitance-voltage measurements, we have, for the first time, observed inversion behavior in MOS structures on boron-doped diamond, with a doping concentration of 4.1 × 10 19 /cm 3 .
ISSN:0741-3106
1558-0563
1558-0563
DOI:10.1109/LED.2015.2423971