Ferroelectric Si-Doped HfO 2 Device Properties on Highly Doped Germanium

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Bibliographic Details
Published in:IEEE electron device letters 2015-08, Vol.36 (8), p.766-768
Main Authors: Lomenzo, Patrick D., Takmeel, Qanit, Fancher, Chris M., Zhou, Chuanzhen, Rudawski, Nicholas G., Moghaddam, Saeed, Jones, Jacob L., Nishida, Toshikazu
Format: Article
Language:English
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2445352