Ferroelectric Si-Doped HfO 2 Device Properties on Highly Doped Germanium

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Published in:IEEE electron device letters 2015-08, Vol.36 (8), p.766-768
Main Authors: Lomenzo, Patrick D., Takmeel, Qanit, Fancher, Chris M., Zhou, Chuanzhen, Rudawski, Nicholas G., Moghaddam, Saeed, Jones, Jacob L., Nishida, Toshikazu
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creator Lomenzo, Patrick D.
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doi_str_mv 10.1109/LED.2015.2445352
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title Ferroelectric Si-Doped HfO 2 Device Properties on Highly Doped Germanium
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